Listening
well and notetaking are good foundations for learning
in any lecture class. A few
students may be able to stick
to these two basic skills and succeed without doing much
else. They are most likely auditory
learners, who have special strengths
when it comes to remembering what they have heard.
Most other students, however, will probably need to add
on
a step or two to make sure they learn the material covered in
class. Converting the informal
outline technique into a notetaking system requires only a few small changes in
notetaking procedures and some extra time for
studying.
1. Adapt your notebook, by
drawing (or imagining) a
margin line 3 inches from the left side of each page. The right hand side will be the note column, the left hand side
becomes the memory margin.
2. Take notes using the
informal outline in the area to the
right of the margin. You will fill
in the memory margin after class.
3. As soon as you can after
class, reread your notes and prepare to fill-in the left hand column.
4. To the left of each block of notes (that is, each
main idea), do one of the following:
|
QUESTION
|
KEY WORD |
| Write
a question answered by the notes in that block. If a block contains more
information than one question can answer, write two (or even more) questions. |
Write a key word--a word
by that triggers in your
memory the material contained in the block
of notes. Key words are
like labels that haven't been
turned into questions. |
Notice that the notes are the same in both cases, only the
Memory Margin is different. Using
questions or key words in
the memory margin is a matter of personal preference. Which one will help you learn the material better?
5. Cover the note column with a sheet of paper and quiz yourself.
Read each question or key word. Then
either recite
or write the answers the question or goes with the key word.
If you give the correct answer, go on to the next question.
If you have difficulty, reread the block of notes beside
the question; then cover your notes and try again.
Here
are examples of both types of memory margin: